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2N2907AUB
Discrete Semiconductor Products

JANTXV2N2369AUB

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Microchip Technology

15V 680MW NPN ROUND-END SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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2N2907AUB
Discrete Semiconductor Products

JANTXV2N2369AUB

Active
Microchip Technology

15V 680MW NPN ROUND-END SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N2369AUB
Current - Collector Cutoff (Max) [Max]400 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
GradeMilitary
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Power - Max [Max]400 mW
QualificationMIL-PRF-19500/317
Supplier Device PackageUB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic450 mV
Voltage - Collector Emitter Breakdown (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 25.93
NewarkEach 100$ 25.94
500$ 24.94

Description

General part information

JAN2N2369AUA-Transistor Series

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

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