Discrete Semiconductor Products

SQM110P06-8M9L_GE3

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POWER MOSFET, P CHANNEL, 60 V, 110 A, 0.0089 OHM, TO-263 (D2PAK), SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 60 V, 110 A, 0.0089 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	SQM110P06-8M9L_GE3

Current - Continuous Drain (Id) @ 25°C	110 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	200 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	7450 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	8.9 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Grade	Qualification	FET Type	Rds On (Max) @ Id, Vgs [Max]
Vishay General Semiconductor - Diodes Division SQM110P06-8M9L_GE3	7450 pF	200 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	2.5 V	60 V	20 V	110 A	4.5 V 10 V	-55 °C	175 ░C	Surface Mount	TO-263 (D2PAK)	MOSFET (Metal Oxide)	230 W	Automotive	AEC-Q101	P-Channel	8.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 110A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources