SQM110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
POWER MOSFET, P CHANNEL, 60 V, 110 A, 0.0089 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Supplier Device Package | Technology | Power Dissipation (Max) [Max] | Grade | Qualification | FET Type | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 7450 pF | 200 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.5 V | 60 V | 20 V | 110 A | 4.5 V 10 V | -55 °C | 175 ░C | Surface Mount | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 230 W | Automotive | AEC-Q101 | P-Channel | 8.9 mOhm |