Discrete Semiconductor Products

BUX87

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BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 20 MHZ, 40 W, 500 MA, 50 HFE

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Discrete Semiconductor Products

Active

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 450 V, 20 MHZ, 40 W, 500 MA, 50 HFE

Technical Specifications

Parameters and characteristics for this part

Specification	BUX87

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	12 hFE
Frequency - Transition	20 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	40 W
Supplier Device Package	SOT-32-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	450 V

High voltage NPN power transistor

Part	Mounting Type	Transistor Type	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Operating Temperature	Current - Collector (Ic) (Max) [Max]
STMicroelectronics BUX87	Through Hole	NPN	20 MHz	1 V	450 V	TO-126-3 TO-225AA	100 µA	40 W	12 hFE	SOT-32-3	150 °C	500 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The BUX87 is manufactured using High Voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage withstand capability.

Technical documentation and resources