Discrete Semiconductor Products
STB33N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE
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Discrete Semiconductor Products
STB33N60M2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.108 OHM TYP., 26 A MDMESH M2 POWER MOSFETS IN D2PAK PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STB33N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 26 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1781 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 190 W |
| Rds On (Max) @ Id, Vgs | 125 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 470 | $ 4.86 | |
Description
General part information
STB33N60M2 Series
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources