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Technical Specifications
Parameters and characteristics for this part
| Specification | FQP13N06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 135 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
| Part | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Vgs (Max) | FET Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | Through Hole | -55 °C | 175 ░C | 10 V | TO-220-3 | 100 V | 25 nC | MOSFET (Metal Oxide) | 25 V | N-Channel | 19 A | 780 pF | 100 mOhm | 75 W | TO-220-3 | 4 V | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 600 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 10.5 A | 1900 pF | 700 mOhm | 180 W | TO-220-3 | 5 V | 54 nC | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 400 V | 35 nC | MOSFET (Metal Oxide) | 30 V | N-Channel | 11.4 A | 1400 pF | 480 mOhm | 147 W | TO-220-3 | 5 V | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 600 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 10.5 A | 1900 pF | 700 mOhm | 180 W | TO-220-3 | 5 V | 54 nC | |
 ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 500 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 13 A | 2055 pF | 480 mOhm | 195 W | TO-220-3 | 4 V | 56 nC | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 500 V | 5.5 nC | MOSFET (Metal Oxide) | 30 V | N-Channel | 1.4 A | 150 pF | 9 Ohm | 40 W | TO-220-3 | 5 V | |
 ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 500 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 11 A | 2055 pF | 550 mOhm | 195 W | TO-220-3 | 4 V | 55 nC | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 600 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 9.5 A | 2040 pF | 730 mOhm | 156 W | TO-220-3 | 4 V | 57 nC | |
ON Semiconductor | Through Hole | -55 °C | 150 °C | 10 V | TO-220-3 | 500 V | MOSFET (Metal Oxide) | 30 V | N-Channel | 11 A | 2055 pF | 550 mOhm | 195 W | TO-220-3 | 4 V | 55 nC | |
ON Semiconductor | Through Hole | -55 °C | 175 ░C | 10 V | TO-220-3 | 60 V | MOSFET (Metal Oxide) | 25 V | N-Channel | 13 A | 310 pF | 135 mOhm | 45 W | TO-220-3 | 4 V | 7.5 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 888 | $ 0.34 | |
| 888 | $ 0.34 | |||
Description
General part information
FQP1 Series
N-Channel 60 V 13A (Tc) 45W (Tc) Through Hole TO-220-3
Documents
Technical documentation and resources