FQP1 Series

Catalog

MOSFET N-CH 100V 19A TO220-3

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FQP19N10	Through Hole	-55 °C	175 ░C	10 V	TO-220-3	100 V	25 nC	MOSFET (Metal Oxide)	25 V	N-Channel	19 A	780 pF	100 mOhm	75 W	TO-220-3	4 V
ON Semiconductor FQP12N60	Through Hole	-55 °C	150 °C	10 V	TO-220-3	600 V		MOSFET (Metal Oxide)	30 V	N-Channel	10.5 A	1900 pF	700 mOhm	180 W	TO-220-3	5 V	54 nC
ON Semiconductor FQP11N40	Through Hole	-55 °C	150 °C	10 V	TO-220-3	400 V	35 nC	MOSFET (Metal Oxide)	30 V	N-Channel	11.4 A	1400 pF	480 mOhm	147 W	TO-220-3	5 V
ON Semiconductor FQP12N60	Through Hole	-55 °C	150 °C	10 V	TO-220-3	600 V		MOSFET (Metal Oxide)	30 V	N-Channel	10.5 A	1900 pF	700 mOhm	180 W	TO-220-3	5 V	54 nC
ON Semiconductor FQP13N50C_F105	Through Hole	-55 °C	150 °C	10 V	TO-220-3	500 V		MOSFET (Metal Oxide)	30 V	N-Channel	13 A	2055 pF	480 mOhm	195 W	TO-220-3	4 V	56 nC
ON Semiconductor FQP1N50	Through Hole	-55 °C	150 °C	10 V	TO-220-3	500 V	5.5 nC	MOSFET (Metal Oxide)	30 V	N-Channel	1.4 A	150 pF	9 Ohm	40 W	TO-220-3	5 V
ON Semiconductor FQP11N50CF	Through Hole	-55 °C	150 °C	10 V	TO-220-3	500 V		MOSFET (Metal Oxide)	30 V	N-Channel	11 A	2055 pF	550 mOhm	195 W	TO-220-3	4 V	55 nC
ON Semiconductor FQP10N60C	Through Hole	-55 °C	150 °C	10 V	TO-220-3	600 V		MOSFET (Metal Oxide)	30 V	N-Channel	9.5 A	2040 pF	730 mOhm	156 W	TO-220-3	4 V	57 nC
ON Semiconductor FQP11N50CF	Through Hole	-55 °C	150 °C	10 V	TO-220-3	500 V		MOSFET (Metal Oxide)	30 V	N-Channel	11 A	2055 pF	550 mOhm	195 W	TO-220-3	4 V	55 nC
ON Semiconductor FQP13N06	Through Hole	-55 °C	175 ░C	10 V	TO-220-3	60 V		MOSFET (Metal Oxide)	25 V	N-Channel	13 A	310 pF	135 mOhm	45 W	TO-220-3	4 V	7.5 nC