Discrete Semiconductor Products

JANTX2N2219

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Microchip Technology

NPN SILICON SWITCHING 30V TO 50V, 0.8A

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Search across all available documentation for this part.

Documents2N2218A and 2N2219A

Discrete Semiconductor Products

JANTX2N2219

Unknown

Microchip Technology

NPN SILICON SWITCHING 30V TO 50V, 0.8A

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Documents2N2218A and 2N2219A

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANTX2N2219

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-39-3 Metal Can, TO-205AD
Power - Max [Max]	800 mW
Qualification	MIL-PRF-19500/251
Supplier Device Package	TO-39
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

2N2219AE4-Transistor-RoHS Series

NPN Silicon Switching 30V to 50V, 0.8A

Part	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Transistor Type	Grade	Qualification
Microchip Technology 2N2219A	800 mA	50 V	TO-39 (TO-205AD)	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1 V	10 nA	NPN
Microchip Technology JAN2N2219A	800 mA	50 V	TO-39	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JANTX2N2219A	800 mA	50 V	TO-39	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JANTXV2N2219	800 mA	30 V	TO-205AD	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1.6 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology 2N2219AL	800 mA	50 V	TO-39 (TO-205AD)	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1 V	10 nA	NPN
Microchip Technology JANSR2N2219	800 mA	50 V	TO-39 (TO-205AD)	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1.6 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JANTXV2N2219A	800 mA	50 V	TO-205AD	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JANS2N2219	800 mA	50 V	TO-39 (TO-205AD)	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1.6 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JANTX2N2219	800 mA	30 V	TO-39	-55 °C	200 C	Through Hole	100	800 mW	TO-205AD TO-39-3 Metal Can	1.6 V	10 nA	NPN	Military	MIL-PRF-19500/251
Microchip Technology JAN2N2219AL	800 mA	50 V	TO-5	-55 °C	200 C	Through Hole	100	800 mW	TO-205AA TO-5-3 Metal Can	1 V	10 nA	NPN	Military	MIL-PRF-19500/251

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 8.58
Microchip Direct	N/A	1	$ 9.24

Description

General part information

2N2219AE4-Transistor-RoHS Series

This specification covers the performance requirements for NPN, silicon, switching, 2N2218 and 2N2219 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/251. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: TO-39 and TO-5.

Documents

Technical documentation and resources

2N2218A and 2N2219A

Data Sheets