Discrete Semiconductor Products

FDD13AN06A0

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POWER MOSFET, N CHANNEL, 60 V, 9.9 A, 0.0115 OHM, TO-252AA, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 9.9 A, 0.0115 OHM, TO-252AA, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	FDD13AN06A0

Current - Continuous Drain (Id) @ 25°C	9.9 A, 50 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	115 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

N-Channel PowerTrench<sup>®</sup> MOSFET 60V, 50A, 13mΩ

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDD13AN06A0	115 W	60 V	-55 °C	175 ░C	29 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	13.5 mOhm	N-Channel	20 V	TO-252AA	MOSFET (Metal Oxide)	4 V	9.9 A 50 A	1350 pF	6 V 10 V

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General part information

N-Channel PowerTrench®MOSFET 60V, 50A, 13mΩ

Technical documentation and resources