FDD13AN06A0 Series

N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ

Catalog

N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDD13AN06A0	115 W	60 V	-55 °C	175 ░C	29 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	13.5 mOhm	N-Channel	20 V	TO-252AA	MOSFET (Metal Oxide)	4 V	9.9 A 50 A	1350 pF	6 V 10 V

N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ

• RDS(on)= 11.5mΩ (Typ.) @ VGS= 10V, ID= 50A

• QG(tot)= 22nC (Typ.) @ VGS= 10V

• Low Miller Charge

• Low QrrBody Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

N-Channel PowerTrench®MOSFET 60V, 50A, 13mΩ