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Microchip Technology-GRP-B-DATA-JANTX2N918UB RF BJT Trans RF BJT NPN 15V 0.05A 200mW 4-Pin Case UB Waffle
Discrete Semiconductor Products

JANS1N5712UBCC

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Microchip Technology

DIODE SCHOTTKY 4-PIN CASE UB WAFFLE

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Microchip Technology-GRP-B-DATA-JANTX2N918UB RF BJT Trans RF BJT NPN 15V 0.05A 200mW 4-Pin Case UB Waffle
Discrete Semiconductor Products

JANS1N5712UBCC

Active
Microchip Technology

DIODE SCHOTTKY 4-PIN CASE UB WAFFLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANS1N5712UBCC
Current - Average Rectified (Io) (per Diode)75 mA
Current - Reverse Leakage @ Vr150 nA
Diode Configuration1 Pair Common Cathode
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-65 C
Package / Case4-SMD, No Lead
QualificationMIL-PRF-19500/444
SpeedAny Speed
Speed200 mA
Supplier Device PackageUB
TechnologySchottky
Voltage - DC Reverse (Vr) (Max) [Max]16 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 150.53

Description

General part information

JANTX1N5712UBCA-Schottky-Diode Series

This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications. This small diode is hermetically sealed and bonded into a DO-213AA glass package. Also included in this datasheet are Microchip’s CDLL numbered variants of this series (military qualification grades not are not available for the CDLL prefix part numbers).

Documents

Technical documentation and resources

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