Discrete Semiconductor Products
JAN2N5745
ActiveMicrochip Technology
PNP SILICON POWER -60V TO -80V, -20A TO -30A
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Search across all available documentation for this part.
Discrete Semiconductor Products
JAN2N5745
ActiveMicrochip Technology
PNP SILICON POWER -60V TO -80V, -20A TO -30A
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N5745 |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 5 W |
| Qualification | MIL-PRF-19500/433 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 50 | $ 83.65 | |
| Microchip Direct | N/A | 1 | $ 83.65 | |
| Newark | Each | 1 | $ 83.65 | |
| 100 | $ 77.68 | |||
| 500 | $ 74.69 | |||
Description
General part information
JAN2N5745-Transistor Series
This specification covers the performance requirements for PNP silicon, high-power, 2N4399 and 2N5745 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/433.
Documents
Technical documentation and resources