Discrete Semiconductor Products

IXTA130N15X4-7

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Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRJNCTN X3CLASS TO-263D2/ TUBE

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Discrete Semiconductor Products

IXTA130N15X4-7

Active

Littelfuse/Commercial Vehicle Products

DISCMSFT NCHULTRJNCTN X3CLASS TO-263D2/ TUBE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA130N15X4-7

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	4770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	400 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	TO-263-7 (IXTA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXTA130N15X4-7 Series

DiscMSFT NChUltrJnctn X3Class TO-263D2

Part	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXTA130N10T-TRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	360 W	4.5 V	104 nC	MOSFET (Metal Oxide)	30 V	5080 pF	100 V	9.1 mOhm	-55 °C	175 ░C	Surface Mount	10 V	TO-263AA	130 A	N-Channel
Littelfuse/Commercial Vehicle Products IXTA130N15X4-7	D2PAK TO-263-7		4.5 V		MOSFET (Metal Oxide)	20 V		150 V	8 mOhm	-55 °C	150 °C	Surface Mount	10 V	TO-263-7 (IXTA)	130 A	N-Channel	400 W	87 nC	4770 pF
Littelfuse/Commercial Vehicle Products IXTA130N15X4	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.5 V		MOSFET (Metal Oxide)	20 V		150 V	8 mOhm	-55 °C	150 °C	Surface Mount	10 V	TO-263AA	130 A	N-Channel	400 W	87 nC	4770 pF
Littelfuse/Commercial Vehicle Products IXTA130N10T7	D2PAK TO-263-7	360 W	4.5 V	104 nC	MOSFET (Metal Oxide)	20 V	5080 pF	100 V	9.1 mOhm	-55 °C	175 ░C	Surface Mount	10 V	TO-263-7 (IXTA)	130 A	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 5.96
Newark	Each	250	$ 6.72
		500	$ 6.25

Description

General part information

IXTA130N15X4-7 Series

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.

Documents

Technical documentation and resources