IXTA130N15X4-7 Series

DiscMSFT NChUltrJnctn X3Class TO-263D2

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChUltrJnctn X3Class TO-263D2

Part	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXTA130N10T-TRL	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	360 W	4.5 V	104 nC	MOSFET (Metal Oxide)	30 V	5080 pF	100 V	9.1 mOhm	-55 °C	175 ░C	Surface Mount	10 V	TO-263AA	130 A	N-Channel
Littelfuse/Commercial Vehicle Products IXTA130N15X4-7	D2PAK TO-263-7		4.5 V		MOSFET (Metal Oxide)	20 V		150 V	8 mOhm	-55 °C	150 °C	Surface Mount	10 V	TO-263-7 (IXTA)	130 A	N-Channel	400 W	87 nC	4770 pF
Littelfuse/Commercial Vehicle Products IXTA130N15X4	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB		4.5 V		MOSFET (Metal Oxide)	20 V		150 V	8 mOhm	-55 °C	150 °C	Surface Mount	10 V	TO-263AA	130 A	N-Channel	400 W	87 nC	4770 pF
Littelfuse/Commercial Vehicle Products IXTA130N10T7	D2PAK TO-263-7	360 W	4.5 V	104 nC	MOSFET (Metal Oxide)	20 V	5080 pF	100 V	9.1 mOhm	-55 °C	175 ░C	Surface Mount	10 V	TO-263-7 (IXTA)	130 A	N-Channel

Catalog

DiscMSFT NChUltrJnctn X3Class TO-263D2

Key Features

• International Standard Packages

• Low RDS(ON)

• Avalanche rated

• High Current Handling Capability

• Fast Intrinsic Rectifier

Description

These devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. In addition, these MOSFETs are avalanche rated and exhibit a superior dv/dt performance. Also due to the positive temperature coefficient of their on-state resistance, they can be operated in parallel to meet higher current requirements.