Discrete Semiconductor Products

SIHA11N80AE-GE3

Active

MOSFET N-CH 800V 8A TO220

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 800V 8A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SIHA11N80AE-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	804 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	450 mOhm
Supplier Device Package	TO-220 Full Pack
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHA11N80E-GE3	N-Channel	TO-220 Full Pack	Through Hole	10 V	4 V	1670 pF	MOSFET (Metal Oxide)	440 mOhm	800 V	34 W	12 A	TO-220-3 Full Pack	-55 °C	150 °C	88 nC	30 V
Vishay General Semiconductor - Diodes Division SIHA11N80AE-GE3	N-Channel	TO-220 Full Pack	Through Hole	10 V	4 V	804 pF	MOSFET (Metal Oxide)	450 mOhm	800 V	31 W	8 A	TO-220-3 Full Pack	-55 °C	150 °C	42 nC	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 800 V 8A (Tc) 31W (Tc) Through Hole TO-220 Full Pack

Technical documentation and resources