SIHA11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 800V 12A TO220
| Part | FET Type | Supplier Device Package | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | TO-220 Full Pack | Through Hole | 10 V | 4 V | 1670 pF | MOSFET (Metal Oxide) | 440 mOhm | 800 V | 34 W | 12 A | TO-220-3 Full Pack | -55 °C | 150 °C | 88 nC | 30 V |
 Vishay General Semiconductor - Diodes Division | N-Channel | TO-220 Full Pack | Through Hole | 10 V | 4 V | 804 pF | MOSFET (Metal Oxide) | 450 mOhm | 800 V | 31 W | 8 A | TO-220-3 Full Pack | -55 °C | 150 °C | 42 nC | 30 V |