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Discrete Semiconductor Products

JANS2N5666U3

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Microchip Technology

TRANS GP BJT NPN 200V 5A 3-PIN SMD-0.5

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U3
Discrete Semiconductor Products

JANS2N5666U3

Active
Microchip Technology

TRANS GP BJT NPN 200V 5A 3-PIN SMD-0.5

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANS2N5666U3
Current - Collector (Ic) (Max)5 A
Current - Collector Cutoff (Max) [Max]200 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeSurface Mount
Power - Max [Max]1.5 W
QualificationMIL-PRF-19500/455
Supplier Device PackageU3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 50$ 1102.50

Description

General part information

JANTX2N5666U3-Transistor Series

This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Documents

Technical documentation and resources