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Discrete Semiconductor Products

1N5553US/TR

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 800V, 5A, 2000NS B-MELF BAG T/R

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SQ-MELF
Discrete Semiconductor Products

1N5553US/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 800V, 5A, 2000NS B-MELF BAG T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification1N5553US/TR
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseSQ-MELF, B
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageSQ-MELF, B
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]800 V
Voltage - Forward (Vf) (Max) @ If1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 9.85
Microchip DirectN/A 1$ 10.61
NewarkEach 100$ 9.85
500$ 9.48

Description

General part information

1N5553US-TR-Rectifier Series

This "standard recovery" surface mount rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 5.0 amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds.

Documents

Technical documentation and resources