Discrete Semiconductor Products
NVDD5894NLT4G
ObsoleteON Semiconductor
DUAL N−CHANNEL POWER MOSFET 40V, 64A, 10MΩ
Discrete Semiconductor Products
NVDD5894NLT4G
ObsoleteON Semiconductor
DUAL N−CHANNEL POWER MOSFET 40V, 64A, 10MΩ
Technical Specifications
Parameters and characteristics for this part
| Specification | NVDD5894NLT4G |
|---|---|
| Configuration | 2 N-Channel (Dual) Common Drain |
| Current - Continuous Drain (Id) @ 25°C | 14 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 2103 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DPAK (4 Leads + Tab), TO-252-5, TO-252AD |
| Power - Max [Max] | 3.8 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10 mOhm |
| Supplier Device Package | DPAK-5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVDD5894NL Series
Automotive Power MOSFET. 40V, 64A, 10 mΩ, Dual N−Channel, DPAK−5L, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources