NVDD5894NL Series

Dual N−Channel Power MOSFET 40V, 64A, 10mΩ

Catalog

Dual N−Channel Power MOSFET 40V, 64A, 10mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Grade	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Qualification
ON Semiconductor NVDD5894NLT4G	41 nC	Surface Mount	40 V	14 A	2.5 V	3.8 W	Automotive	10 mOhm	DPAK-5	2103 pF	2 N-Channel (Dual) Common Drain	MOSFET (Metal Oxide)	-55 °C	175 ░C	DPAK (4 Leads + Tab) TO-252-5 TO-252AD	AEC-Q101

Catalog

Dual N−Channel Power MOSFET 40V, 64A, 10mΩ

Key Features

• Low on resistance

• High current capability

• Avalanche Energy Specified

• AEC−Q101 Qualified and PPAP Capable

• Dual common drain configuration

• RoHS Compliant

Description

Automotive Power MOSFET. 40V, 64A, 10 mΩ, Dual N−Channel, DPAK−5L, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.