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2N2907AUB
Discrete Semiconductor Products

JANTXV2N4033UB

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Microchip Technology

TRANS GP BJT PNP 80V 1A 500MW 4-PIN CASE UB WAFFLE

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2N2907AUB
Discrete Semiconductor Products

JANTXV2N4033UB

Active
Microchip Technology

TRANS GP BJT PNP 80V 1A 500MW 4-PIN CASE UB WAFFLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N4033UB
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100 hFE
GradeMilitary
Mounting TypeSurface Mount
Package / Case4-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/512
Supplier Device PackageUB
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 27.77
Microchip DirectN/A 1$ 29.90
NewarkEach 100$ 27.77
500$ 26.70

Description

General part information

JANTXV2N4033UB-Transistor Series

This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources