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SOT1118
Discrete Semiconductor Products

PMDPB65UP,115

Obsolete
NXP USA Inc.

MOSFET 2P-CH 20V 3.5A 6HUSON

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DocumentsDatasheet
SOT1118
Discrete Semiconductor Products

PMDPB65UP,115

Obsolete
NXP USA Inc.

MOSFET 2P-CH 20V 3.5A 6HUSON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB65UP,115
Channel Count2
ConfigurationP-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)3.5 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)6 nC
Input Capacitance (Ciss) (Max)380 pF, 380 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max520 mW
Rds On (Max)70 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

CAD

3D models and CAD resources for this part

Description

General part information

PMDPB Series

Mosfet Array 20V 3.5A 520mW Surface Mount 6-HUSON (2x2)

Documents

Technical documentation and resources