Discrete Semiconductor Products

PMDPB28UN,115

Obsolete

MOSFET 2N-CH 20V 4.6A 6HUSON

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Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 20V 4.6A 6HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PMDPB28UN,115

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	4.7 nC
Input Capacitance (Ciss) (Max) @ Vds	265 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-UDFN Exposed Pad
Power - Max [Max]	510 mW
Rds On (Max) @ Id, Vgs [Max]	37 mOhm
Supplier Device Package	6-HUSON (2x2)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Technology	FET Feature	Configuration	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature
Freescale Semiconductor - NXP PMDPB28UN,115	4.7 nC	-55 °C	150 °C	510 mW	MOSFET (Metal Oxide)	Logic Level Gate	2 N-Channel (Dual)	6-HUSON (2x2)	20 V	37 mOhm	4.6 A	265 pF	1 V	6-UDFN Exposed Pad	Surface Mount
Freescale Semiconductor - NXP PMDPB65UP,115				520 mW	MOSFET (Metal Oxide)	Logic Level Gate	2 P-Channel	6-HUSON (2x2)	20 V		3.5 A	380 pF	1 V	6-UDFN Exposed Pad	Surface Mount	6 nC	70 mOhm	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.6A 510mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources