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SOT1118
Discrete Semiconductor Products

PMDPB28UN,115

Obsolete
NXP USA Inc.

MOSFET 2N-CH 20V 4.6A 6HUSON

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DocumentsDatasheet
SOT1118
Discrete Semiconductor Products

PMDPB28UN,115

Obsolete
NXP USA Inc.

MOSFET 2N-CH 20V 4.6A 6HUSON

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPMDPB28UN,115
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesDual
Current - Continuous Drain (Id)4.6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)4.7 nC
Input Capacitance (Ciss) (Max)265 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-UDFN Exposed Pad
Package Length2 mm
Package Name6-HUSON
Package Width2 mm
Power - Max510 mW
Rds On (Max)37 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+
310680$ 0.58

CAD

3D models and CAD resources for this part

Description

General part information

PMDPB Series

Mosfet Array 20V 4.6A 510mW Surface Mount 6-HUSON (2x2)

Documents

Technical documentation and resources