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CSD17313Q2Q1
Discrete Semiconductor Products

CSD17313Q2Q1

Obsolete
Texas Instruments

MOSFET N-CH 30V 5A 6WSON

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CSD17313Q2Q1
Discrete Semiconductor Products

CSD17313Q2Q1

Obsolete
Texas Instruments

MOSFET N-CH 30V 5A 6WSON

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17313Q2Q1
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]3 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]340 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Power Dissipation (Max)2.3 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device Package6-WSON (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-8 V
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.74
10$ 0.64
100$ 0.44
500$ 0.37
1000$ 0.31
Digi-Reel® 1$ 0.74
10$ 0.64
100$ 0.44
500$ 0.37
1000$ 0.31
Tape & Reel (TR) 3000$ 0.28
6000$ 0.26
9000$ 0.24
30000$ 0.24

Description

General part information

CSD17313Q2 Series

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.

Documents

Technical documentation and resources

No documents available