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ONSEMI KSA1013YBU
Discrete Semiconductor Products

BC546ABU

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 100 MA, 500 MW, TO-92, THROUGH HOLE

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ONSEMI KSA1013YBU
Discrete Semiconductor Products

BC546ABU

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 100 MA, 500 MW, TO-92, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

SpecificationBC546ABU
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]15 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]110
Frequency - Transition300 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-226-3, TO-92-3
Power - Max [Max]500 mW
Supplier Device PackageTO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic600 mV
Voltage - Collector Emitter Breakdown (Max)65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 1$ 0.27
10$ 0.16
100$ 0.10
500$ 0.07
1000$ 0.07
2000$ 0.06
5000$ 0.05
10000$ 0.05
50000$ 0.04
NewarkEach 1$ 0.23
10$ 0.15
100$ 0.08
500$ 0.08
1000$ 0.07
2500$ 0.06
10000$ 0.06
ON SemiconductorN/A 1$ 0.03

Description

General part information

BC546B Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.