BC546B Series

Transistor NPN Silicon Plastic

Catalog

Transistor NPN Silicon Plastic

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Power - Max [Max]	Mounting Type	Supplier Device Package	Supplier Device Package	Operating Temperature	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor BC546B	600 mV	100 mA	TO-226-3 TO-92-3 Long Body	65 V	110	NPN	15 nA	300 MHz	625 mW	Through Hole	TO-92	TO-226
ON Semiconductor BC546BTAR	600 mV	100 mA	TO-226-3 TO-92-3	65 V	200	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546ABU	600 mV	100 mA	TO-226-3 TO-92-3	65 V	110	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546TA	600 mV	100 mA	TO-226-3 TO-92-3	65 V	110	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546ATA	600 mV	100 mA	TO-226-3 TO-92-3	65 V	110	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546BTFR	600 mV	100 mA	TO-226-3 TO-92-3	65 V	200	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546_J18Z	600 mV	100 mA	TO-226-3 TO-92-3	65 V	110	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546TF	600 mV	100 mA	TO-226-3 TO-92-3	65 V	110	NPN	15 nA	300 MHz	500 mW	Through Hole	TO-92-3		150 °C
ON Semiconductor BC546BG	600 mV	100 mA	TO-226-3 TO-92-3 Long Body	65 V	200	NPN	15 nA	300 MHz	625 mW	Through Hole	TO-92	TO-226		-55 °C	150 °C

Catalog

Transistor NPN Silicon Plastic

Key Features

• Pb-Free Package is Available*

Description

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.