Specification	NSV20200DMTWTBG

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	250
Frequency - Transition	155 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Supplier Device Package	6-WDFN (2x2)
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	390 mV

NSS20200DM Series

Dual 20V 2A Low V<sub>CE(sat)</sub> PNP Transistors in WDFN6

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition
ON Semiconductor NSV20200DMTWTBG	250	100 nA	6-WDFN (2x2)	2 PNP (Dual)	390 mV	-55 °C	150 °C	Surface Mount	155 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.10
		10	$ 0.69
		100	$ 0.45
		500	$ 0.35
		1000	$ 0.32
	Digi-Reel®	1	$ 1.10
		10	$ 0.69
		100	$ 0.45
		500	$ 0.35
		1000	$ 0.32
	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.25
		9000	$ 0.24
		15000	$ 0.23
		21000	$ 0.23
Newark	Each	2500	$ 0.25
		10000	$ 0.24
ON Semiconductor	N/A	1	$ 0.25

Description

General part information

NSS20200DM Series

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.