NSS20200DM Series

Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6

Catalog

Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Frequency - Transition
ON Semiconductor NSV20200DMTWTBG	250	100 nA	6-WDFN (2x2)	2 PNP (Dual)	390 mV	-55 °C	150 °C	Surface Mount	155 MHz

Catalog

Dual 20V 2A Low VCE(sat) PNP Transistors in WDFN6

Key Features

• NSV20200DMTWTBG - Wettable Flanks Packaged Device

-2A IDC, -3A ICM

• Low VCE(sat): -0.39V @ -2A IC, IC/IB= 10

• Beta of 150 @ -2ADC, VCE= -2V

• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

Description

ON Semiconductor’s e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability in a small form factor, 2x2mm plastic leadless package. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. In the automotive industry they can be used in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.