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Discrete Semiconductor Products

JANTX2N5581

Active
Microchip Technology

NPN SILICON SWITCHING 50V, 0.8A

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Discrete Semiconductor Products

JANTX2N5581

Active
Microchip Technology

NPN SILICON SWITCHING 50V, 0.8A

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5581
Current - Collector (Ic) (Max) [Max]800 mA
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-206AB, TO-46-3 Metal Can
Power - Max [Max]500 mW
QualificationMIL-PRF-19500/423
Supplier Device PackageTO-46 (TO-206AB)
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 8.82
Microchip DirectN/A 1$ 9.49

Description

General part information

JANTXV2N5581-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N5581 and 2N5582 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/423. The device packages for the encapsulated device types are as follows: (2N5581 and 2N5582) (similar to TO-46).

Documents

Technical documentation and resources