Discrete Semiconductor Products

HUFA76413DK8T-F085

Obsolete

ON Semiconductor

60V, 5.1A,41MΩ, SO-8, LOGIC LEVEL<BR> DUAL N-CHANNEL POWERTRENCH®

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Discrete Semiconductor Products

HUFA76413DK8T-F085

Obsolete

ON Semiconductor

60V, 5.1A,41MΩ, SO-8, LOGIC LEVEL<BR> DUAL N-CHANNEL POWERTRENCH®

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HUFA76413DK8T-F085

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	23 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	49 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

HUF76413DK_F085 Series

60V, 5.1A,41mΩ, SO-8, Logic Level<BR> Dual N-Channel PowerTrench®

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Grade	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Qualification
ON Semiconductor HUFA76413DK8T-F085	3 V	23 nC	5.1 A	60 V	Logic Level Gate	Automotive	2.5 W	620 pF	MOSFET (Metal Oxide)	49 mOhm	Surface Mount	-55 °C	150 °C	8-SOIC	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HUF76413DK_F085 Series

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.