HUF76413DK_F085 Series

60V, 5.1A,41mΩ, SO-8, Logic Level<BR> Dual N-Channel PowerTrench®

Catalog

60V, 5.1A,41mΩ, SO-8, Logic Level<BR> Dual N-Channel PowerTrench®

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Grade	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Qualification
ON Semiconductor HUFA76413DK8T-F085	3 V	23 nC	5.1 A	60 V	Logic Level Gate	Automotive	2.5 W	620 pF	MOSFET (Metal Oxide)	49 mOhm	Surface Mount	-55 °C	150 °C	8-SOIC	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	AEC-Q101

Catalog

60V, 5.1A,41mΩ, SO-8, Logic Level<BR> Dual N-Channel PowerTrench®

Key Features

• 150°C Maximum Junction Temperature

• UIS Capability (Single Pulse and Repetitive Pulse)

• Ultra-Low On-ResistancerDS(ON) = 0.049Ω, VGS = 10V

• Ultra-Low On-ResistancerDS(ON) = 0.056Ω, VGS = 5V

• Qualified to AEC Q101

• RoHS Compliant

Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.