Specification	FQB6N40CTM

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	73 W
Rds On (Max) @ Id, Vgs [Max]	1 Ohm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQB6N40C Series

Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Mounting Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
ON Semiconductor FQB6N40CTM	625 pF	6 A	1 Ohm	4 V	73 W	10 V	N-Channel	400 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 nC
ON Semiconductor FQB6N40CTM	625 pF	6 A	1 Ohm	4 V	73 W	10 V	N-Channel	400 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	369	$ 0.81
		369	$ 0.81

Description

General part information

FQB6N40C Series

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.