FQB6N40C Series

Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK

Catalog

Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK

Part	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Mounting Type	Vgs (Max)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [x]
ON Semiconductor FQB6N40CTM	625 pF	6 A	1 Ohm	4 V	73 W	10 V	N-Channel	400 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 nC
ON Semiconductor FQB6N40CTM	625 pF	6 A	1 Ohm	4 V	73 W	10 V	N-Channel	400 V	TO-263 (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	30 V	MOSFET (Metal Oxide)	-55 °C	150 °C	20 nC

Catalog

Power MOSFET, N-Channel, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK

Key Features

• 6 A, 400 V, RDS(on)= 1.0 Ω (Max.) @ VGS= 10 V, ID= 3 A

• Low Gate Charge (Typ. 16nC)

• Low Crss (Typ. 15pF)

• 100% Avalanche Tested

Description

These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.