Discrete Semiconductor Products

SIE802DF-T1-GE3

Obsolete

MOSFET N-CH 30V 60A 10POLARPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 60A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE802DF-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	160 nC
Input Capacitance (Ciss) (Max)	7000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	10-PolarPAK® (L)
Package Name	10-PolarPAK® (L)
Power Dissipation (Max)	5.2 W, 125 W
Rds On (Max)	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.7 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Vgs(th) (Max)	Package / Case	Mounting Type	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Name	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIE802DF-T1-E3	30 V	20 V	N-Channel	2.7 V	10-PolarPAK® (L)	Surface Mount	5.2 W 125 W	-55 °C	150 °C	MOSFET (Metal Oxide)	160 nC	7000 pF	1.9 mOhm	10-PolarPAK® (L)	10 V	4.5 V	60 A
Vishay Dale SIE802DF-T1-GE3	30 V	20 V	N-Channel	2.7 V	10-PolarPAK® (L)	Surface Mount	5.2 W 125 W	-55 °C	150 °C	MOSFET (Metal Oxide)	160 nC	7000 pF	1.9 mOhm	10-PolarPAK® (L)	10 V	4.5 V	60 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 1.73	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Technical documentation and resources