SIE802 Series

Catalog

MOSFET N-CH 30V 60A 10POLARPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Technology
Vishay General Semiconductor - Diodes Division SIE802DF-T1-E3	-55 °C	150 °C	Surface Mount	7000 pF	2.7 V	60 A	30 V	N-Channel	10-PolarPAK® (L)	5.2 W 125 W	160 nC	1.9 mOhm	10-PolarPAK® (L)	4.5 V 10 V	20 V	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIE802DF-T1-GE3	-55 °C	150 °C	Surface Mount	7000 pF	2.7 V	60 A	30 V	N-Channel	10-PolarPAK® (L)	5.2 W 125 W	160 nC	1.9 mOhm	10-PolarPAK® (L)	4.5 V 10 V	20 V	MOSFET (Metal Oxide)