Discrete Semiconductor Products

FDN327N

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N-CHANNEL 1.8 VGS SPECIFIED POWERTRENCH® MOSFET 20V, 2A, 70MΩ

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Discrete Semiconductor Products

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N-CHANNEL 1.8 VGS SPECIFIED POWERTRENCH® MOSFET 20V, 2A, 70MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	FDN327N

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.3 nC
Input Capacitance (Ciss) (Max) @ Vds	423 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

N-Channel 1.8 Vgs Specified PowerTrench® MOSFET 20V, 2A, 70mΩ

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor FDN327N	1.8 V 4.5 V	1.5 V	423 pF	SC-59 SOT-23-3 TO-236-3	Surface Mount	N-Channel	2 A	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	6.3 nC	SOT-23-3	500 mW	70 mOhm	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 20V N-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.

Technical documentation and resources