Discrete Semiconductor Products

SI4500BDY-T1-E3

Obsolete

MOSFET N/P-CH 20V 6.6A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 6.6A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4500BDY-T1-E3

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	6.6 A
Current - Continuous Drain (Id) @ 25°C [Min]	3.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	17 nC
Mounting Type	Surface Mount
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	20 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Technology	Configuration	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature
Vishay General Semiconductor - Diodes Division SI4500BDY-T1-GE3	3.8 A	6.6 A	MOSFET (Metal Oxide)	Common Drain N and P-Channel	Surface Mount	8-SOIC	20 V	20 mOhm	1.5 V	8-SOIC	3.9 mm	0.154 in	17 nC	Logic Level Gate
Vishay General Semiconductor - Diodes Division SI4500BDY-T1-E3	3.8 A	6.6 A	MOSFET (Metal Oxide)	Common Drain N and P-Channel	Surface Mount	8-SOIC	20 V	20 mOhm	1.5 V	8-SOIC	3.9 mm	0.154 in	17 nC	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 6.6A, 3.8A 1.3W Surface Mount 8-SOIC

Technical documentation and resources

No documents available