SI4500 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N/P-CH 20V 6.6A 8SOIC
| Part | Current - Continuous Drain (Id) @ 25°C [Min] | Current - Continuous Drain (Id) @ 25°C [Max] | Technology | Configuration | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 3.8 A | 6.6 A | MOSFET (Metal Oxide) | Common Drain N and P-Channel | Surface Mount | 8-SOIC | 20 V | 20 mOhm | 1.5 V | 8-SOIC | 3.9 mm | 0.154 in | 17 nC | Logic Level Gate |
 Vishay General Semiconductor - Diodes Division | 3.8 A | 6.6 A | MOSFET (Metal Oxide) | Common Drain N and P-Channel | Surface Mount | 8-SOIC | 20 V | 20 mOhm | 1.5 V | 8-SOIC | 3.9 mm | 0.154 in | 17 nC | Logic Level Gate |