LSIC2SD170B10
ActiveSIC SCHOTTKY DIODE 1700V 10A TO-247-2L/ TUBE
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LSIC2SD170B10
ActiveSIC SCHOTTKY DIODE 1700V 10A TO-247-2L/ TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC2SD170B10 |
|---|---|
| Capacitance @ Vr, F | 757 pF |
| Current - Average Rectified (Io) | 31 A |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
LSIC2SD170B10 Series
The LSIC2SD170Bxx 1700V SiC Schottky Barrier Diode in TO-247-2L are available in 10A, 25A and 50A current ratings. SiC Schottky Diodes have negligible reverse recovery, which reduces switching losses and system efficiency. This series of silicon carbide (SiC) Schottky diodes has high surge capability, positive temperature coefficient for ease of paralleling and a maximum operating junction temperature of 175°C. These series is an ideal candidate for applications where improvements in efficiency, improved reliability for paralleling, and thermal management are needed.
Documents
Technical documentation and resources