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Discrete Semiconductor Products

CSD22206WT

Active
Texas Instruments

-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 5.7 MOHM, GATE ESD PROTECTION

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DSBGA (YZF)
Discrete Semiconductor Products

CSD22206WT

Active
Texas Instruments

-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 5.7 MOHM, GATE ESD PROTECTION

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD22206WT
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)8 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14.6 nC
Input Capacitance (Ciss) (Max) @ Vds2275 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 9-UFBGA
Power Dissipation (Max)1.7 W
Rds On (Max) @ Id, Vgs5.7 mOhm
Supplier Device Package9-DSBGA
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]-6 V
Vgs(th) (Max) @ Id1.05 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.94
10$ 0.77
100$ 0.60
Digi-Reel® 1$ 0.94
10$ 0.77
100$ 0.60
Tape & Reel (TR) 250$ 0.59
500$ 0.51
1250$ 0.50
Texas InstrumentsSMALL T&R 1$ 1.15
100$ 0.78
250$ 0.60
1000$ 0.40

Description

General part information

CSD22206W Series

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.