NTD360N80S3Z
NRND<SUP></SUP>MOSFET – POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, 800 V, 13 A, 360 MΩ, DPAK
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NTD360N80S3Z
NRND<SUP></SUP>MOSFET – POWER, N-CHANNEL, SUPERFET<SUP>®</SUP> III, 800 V, 13 A, 360 MΩ, DPAK
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Technical Specifications
Parameters and characteristics for this part
| Specification | NTD360N80S3Z |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 25.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1143 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 96 W |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.75 | |
| 10 | $ 2.46 | |||
| 100 | $ 1.72 | |||
| 500 | $ 1.41 | |||
| 1000 | $ 1.31 | |||
| Digi-Reel® | 1 | $ 3.75 | ||
| 10 | $ 2.46 | |||
| 100 | $ 1.72 | |||
| 500 | $ 1.41 | |||
| 1000 | $ 1.31 | |||
| Tape & Reel (TR) | 2500 | $ 1.28 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.99 | |
| 10 | $ 2.99 | |||
| 25 | $ 2.79 | |||
| 50 | $ 2.58 | |||
| 100 | $ 2.39 | |||
| 250 | $ 2.38 | |||
| 500 | $ 2.12 | |||
| 1000 | $ 2.11 | |||
| ON Semiconductor | N/A | 1 | $ 1.18 | |
Description
General part information
NTD360N80S3Z Series
800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.
Documents
Technical documentation and resources