NTD360N80S3Z Series

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

Catalog

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Mounting Type	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor NTD360N80S3Z	-55 °C	150 °C	96 W	N-Channel	Surface Mount	20 V	MOSFET (Metal Oxide)	13 A	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	1143 pF	25.3 nC	TO-252 (DPAK)	800 V	3.8 V

Catalog

MOSFET – Power, N-Channel, SUPERFET® III, 800 V, 13 A, 360 mΩ, DPAK

Key Features

• 900 V @ TJ= 150 °C

• Ultra Low Gate Charge (Typ. Qg = 25.3 nC)

• Low Stored Energy in Output Capacitance (Eoss = 2.72 µJ @ 400 V)

• Optimized Capacitance

• ESD Improved Capability with Zener Diode

• Typ. RDS(on) = 300 mΩ

• RoHS Compliant

• 100% Avalanche Tested

• Internal Gate Resistance: 4 Ω

Description

800 V SUPERFET III MOSFET is ON Semiconductor’s high performance MOSFET family offering 800 V breakdown voltage. New 800 V SUPERFET III MOSFET which is optimized for primary switch of flyback converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal Zener Diode significantlyimproves ESD capability. This new family of 800 V SUPERFET III MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrialpower supplies.