Discrete Semiconductor Products

GP3D006A065A

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DIODE SIL CARB 650V 20A TO220-2L

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 20A TO220-2L

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D006A065A

Capacitance @ Vr, F	229 pF
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 mA
Supplier Device Package	TO-220-2L
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.55 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Supplier Device Package	Technology	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Mounting Type	Speed
SemiQ GP3D006A065A	175 ░C	-55 °C	650 V	229 pF	TO-220-2L	SiC (Silicon Carbide) Schottky	1.55 V	0 ns	15 µA	TO-220-2	Through Hole	500 mA

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General part information

Diode 650 V 20A Through Hole TO-220-2L

Technical documentation and resources