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8-DFN
Discrete Semiconductor Products

NTMFSC012N15MC

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ON Semiconductor

MOSFET - POWER, DUALCOOL N-CHANNEL, PQFN8, 150V, 11.4MΩ, 80A

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8-DFN
Discrete Semiconductor Products

NTMFSC012N15MC

Active
ON Semiconductor

MOSFET - POWER, DUALCOOL N-CHANNEL, PQFN8, 150V, 11.4MΩ, 80A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNTMFSC012N15MC
Current - Continuous Drain (Id) @ 25°C80 A, 10 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]32.4 nC
Input Capacitance (Ciss) (Max) @ Vds2490 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.7 W, 147 W
Rds On (Max) @ Id, Vgs11.4 mOhm
Supplier Device Package8-DFN (5x6.15)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.95
10$ 2.60
100$ 1.82
500$ 1.50
1000$ 1.39
Digi-Reel® 1$ 3.95
10$ 2.60
100$ 1.82
500$ 1.50
1000$ 1.39
Tape & Reel (TR) 3000$ 1.37
NewarkEach (Supplied on Full Reel) 3000$ 1.65
6000$ 1.54
12000$ 1.43
18000$ 1.38
30000$ 1.36
ON SemiconductorN/A 1$ 1.47

Description

General part information

NTMFSC012N15MC Series

This N-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench®process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Documents

Technical documentation and resources