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TO-220AB
Discrete Semiconductor Products

PSMN4R8-100PSEQ

Obsolete
Nexperia USA Inc.

MOSFET N-CH 100V 120A TO220AB

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TO-220AB
Discrete Semiconductor Products

PSMN4R8-100PSEQ

Obsolete
Nexperia USA Inc.

MOSFET N-CH 100V 120A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN4R8-100PSEQ
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]14400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Rds On (Max) @ Id, Vgs5 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 2.39

Description

General part information

PSMN4R8 Series

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. Part of Nexperia's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low RDS(on)characteristic to keep temperatures down and efficiency up in continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail.

Documents

Technical documentation and resources