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ONSEMI RFD16N05SM9A
Discrete Semiconductor Products

HGTD1N120BNS9A

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ON Semiconductor

TRANS IGBT CHIP N-CH 1200V 5.3A 60W 3-PIN(2+TAB) DPAK T/R

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ONSEMI RFD16N05SM9A
Discrete Semiconductor Products

HGTD1N120BNS9A

Active
ON Semiconductor

TRANS IGBT CHIP N-CH 1200V 5.3A 60W 3-PIN(2+TAB) DPAK T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHGTD1N120BNS9A
Current - Collector Pulsed (Icm)6 A
Gate Charge14 nC
IGBT TypeNPT
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]60 W
Supplier Device PackageTO-252AA
Switching Energy70 µJ, 90 µJ
Td (on/off) @ 25°C67 ns, 15 ns
Test Condition960 V, 1 A, 15 V, 82 Ohm
Vce(on) (Max) @ Vge, Ic2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.56
10$ 1.28
100$ 0.99
500$ 0.84
1000$ 0.69
Digi-Reel® 1$ 1.56
10$ 1.28
100$ 0.99
500$ 0.84
1000$ 0.69
Tape & Reel (TR) 2500$ 0.64
5000$ 0.61
12500$ 0.59
NewarkEach (Supplied on Full Reel) 1$ 0.79
3000$ 0.74
6000$ 0.70
12000$ 0.63
18000$ 0.61
30000$ 0.58
ON SemiconductorN/A 1$ 0.62

Description

General part information

HGTD1N120BNS Series

HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.