HGTD1N120BNS Series

IGBT, 1200V, NPT

Catalog

IGBT, 1200V, NPT

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Package / Case	IGBT Type	Gate Charge	Supplier Device Package	Test Condition	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Pulsed (Icm)	Mounting Type	Switching Energy	Vce(on) (Max) @ Vge, Ic
ON Semiconductor HGTD1N120BNS9A	1200 V	15 ns 67 ns	DPAK (2 Leads + Tab) SC-63 TO-252-3	NPT	14 nC	TO-252AA	1 A 15 V 82 Ohm 960 V	60 W	-55 °C	150 °C	6 A	Surface Mount	70 µJ 90 µJ	2.9 V

Catalog

IGBT, 1200V, NPT

Key Features

• 2.7A, 1200V at TC= 110°C

• Low saturation voltage: VCE(sat) = 2.5V @ IC= 1.0A

• Typical Fall Time...................258ns at TJ= 150°C

• Short Circuit Rating

• Low Conduction Loss

Description

HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.