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8-PQFN
Discrete Semiconductor Products

FDMS8460

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 49 A, 40 V, 0.002 OHM, 10 V, 1.9 V ROHS COMPLIANT: YES

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8-PQFN
Discrete Semiconductor Products

FDMS8460

Active
ON Semiconductor

MOSFET TRANSISTOR, N CHANNEL, 49 A, 40 V, 0.002 OHM, 10 V, 1.9 V ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8460
Current - Continuous Drain (Id) @ 25°C49 A, 25 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]110 nC
Input Capacitance (Ciss) (Max) @ Vds7205 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs2.2 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.48
10$ 2.28
100$ 1.59
500$ 1.30
1000$ 1.20
Digi-Reel® 1$ 3.48
10$ 2.28
100$ 1.59
500$ 1.30
1000$ 1.20
Tape & Reel (TR) 3000$ 1.16
NewarkEach (Supplied on Full Reel) 3000$ 1.47
6000$ 1.40
12000$ 1.26
18000$ 1.21
30000$ 1.16
ON SemiconductorN/A 1$ 0.52

Description

General part information

FDMS8460 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.