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Discrete Semiconductor Products

JANTX1N6661US

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Microchip Technology

DIODE GEN PURP 225V 500MA D-5A

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SQ-MELF, A PKG
Discrete Semiconductor Products

JANTX1N6661US

Active
Microchip Technology

DIODE GEN PURP 225V 500MA D-5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX1N6661US
Current - Average Rectified (Io)500 mA
Current - Reverse Leakage @ Vr50 nA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
QualificationMIL-PRF-19500/587
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageD-5A
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]225 V
Voltage - Forward (Vf) (Max) @ If1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
Microchip DirectN/A 1$ 184.91

Description

General part information

JANTX1N6661US-Rectifier Series

These "standard recovery" rectifier diodes are military qualified to MIL-PRF-19500/587 and is ideal for high-reliability applications where a failure cannot be tolerated. They have a 500 mA rating with working peak reverse voltages from 225 to 600 volts and are hermetically sealed with void-less-glass construction using an internal "Category I" metallurgical bond. The axial-leaded package configurations are also available by deleting the "US" suffix (see separate data sheet for 1N6661 to 1N6663). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including Fast and Ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources