Discrete Semiconductor Products

SIR624DP-T1-GE3

Active

MOSFET N-CH 200V 18.6A PPAK SO-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 200V 18.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIR624DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Supplier Device Package
Vishay General Semiconductor - Diodes Division SIR624DP-T1-RE3	N-Channel	60 mOhm	MOSFET (Metal Oxide)	1110 pF	4 V	5 W 52 W	PowerPAK® SO-8	30 nC	10 V	7.5 V	Surface Mount	5.7 A 18.6 A	-55 °C	150 °C	200 V	20 V	PowerPAK® SO-8
Vishay General Semiconductor - Diodes Division SIR624DP-T1-GE3	N-Channel	60 mOhm	MOSFET (Metal Oxide)	1110 pF	4 V	52 W	PowerPAK® SO-8	23 nC	10 V	7.5 V	Surface Mount	18.6 A	-55 °C	150 °C	200 V	20 V	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 18.6A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources